IndiumV3, Main, Repository, bibRecord, 000506

Spray-ILGAR ZnS nanodots/In2S3 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)2 solar cells

Identifieur interne : 000506 ( Main/Repository ); précédent : 000505; suivant : 000507

Spray-ILGAR ZnS nanodots/In2S3 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)2 solar cells

Auteurs : RBID : Pascal:13-0303899

Descripteurs français

Pascal (Inist)
- Passivation, Contact ponctuel, Système tampon, Cellule solaire, Couche mince métallique, Couche tampon, Porteur charge, Transport charge, Epaisseur, Taux conversion, Etude comparative, Propriété électronique, Matériau absorbant, Diffusion chimique, Jonction diffusion, Processus diffusion, Sulfure de zinc, Sulfure d'indium, Bicouche, Sulfure de gallium, Sulfure de cuivre, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Sulfure de cadmium, Chalcopyrite, ZnS, In2S3, Cu(In,Ga)(S,Se)2, CdS.

English descriptors

KwdEn :
- Absorbent material, Bilayers, Buffer layer, Buffer system, Cadmium sulfide, Chalcopyrite, Charge carrier, Charge transport, Chemical diffusion, Comparative study, Conversion rate, Copper selenides, Copper sulfide, Diffusion junction, Diffusion process, Electronic properties, Gallium selenides, Gallium sulfide, Indium selenides, Indium sulfide, Metallic thin films, Passivation, Point contact, Solar cell, Thickness, Zinc sulfide.

Abstract

The sequential and cyclic spray ion layer gas reaction (spray-ILGAR) technique allows the deposition of metal chalcogenide films controllable from monodispersed nanodots to homogeneous compact layer. With access to this technique, a structured buffer layer for Cu(In,Ga)(S,Se)₂ cells, named "defect passivation/point contact bilayer buffer" is introduced at the heterogeneous interfaces to replace the conventional toxic CdS buffe Prod. Type: FTPr material and to improve the pure In₂S₃ buffer. Here, the spray-ILGAR ZnS nanodots serve as a passivation layer with a reduced interface recombination, while the compact spray-ILGAR In₂S₃ film on top and in-between the nanodots acts as point contact layer for the charge carrier transport. The optimal ZnS dot density and In₂S₃ thickness are determined and discussed in detail. As yet, the solar cell efficiency with ZnS/In₂S₃ buffer layer can be improved by about 1.5% absolutely as compared to a pure In₂S₃ buffered cell. Apart from the electronic properties of the absorber/ buffer interface, also the chemical and diffusion processes during junction formation, which may influence the properties of the completed solar cell, are investigated and discussed.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000744

Links to Exploration step

Pascal:13-0303899

Le document en format XML

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S<sub>3</sub>
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 solar cells</title>
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<author><name sortKey="Fischer, Christian Herbert" uniqKey="Fischer C">Christian-Herbert Fischer</name>
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<idno type="wicri:Area/Main/Corpus">000744</idno>
<idno type="wicri:Area/Main/Repository">000506</idno>
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<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
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<term>Bilayers</term>
<term>Buffer layer</term>
<term>Buffer system</term>
<term>Cadmium sulfide</term>
<term>Chalcopyrite</term>
<term>Charge carrier</term>
<term>Charge transport</term>
<term>Chemical diffusion</term>
<term>Comparative study</term>
<term>Conversion rate</term>
<term>Copper selenides</term>
<term>Copper sulfide</term>
<term>Diffusion junction</term>
<term>Diffusion process</term>
<term>Electronic properties</term>
<term>Gallium selenides</term>
<term>Gallium sulfide</term>
<term>Indium selenides</term>
<term>Indium sulfide</term>
<term>Metallic thin films</term>
<term>Passivation</term>
<term>Point contact</term>
<term>Solar cell</term>
<term>Thickness</term>
<term>Zinc sulfide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Passivation</term>
<term>Contact ponctuel</term>
<term>Système tampon</term>
<term>Cellule solaire</term>
<term>Couche mince métallique</term>
<term>Couche tampon</term>
<term>Porteur charge</term>
<term>Transport charge</term>
<term>Epaisseur</term>
<term>Taux conversion</term>
<term>Etude comparative</term>
<term>Propriété électronique</term>
<term>Matériau absorbant</term>
<term>Diffusion chimique</term>
<term>Jonction diffusion</term>
<term>Processus diffusion</term>
<term>Sulfure de zinc</term>
<term>Sulfure d'indium</term>
<term>Bicouche</term>
<term>Sulfure de gallium</term>
<term>Sulfure de cuivre</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Sulfure de cadmium</term>
<term>Chalcopyrite</term>
<term>ZnS</term>
<term>In2S3</term>
<term>Cu(In,Ga)(S,Se)2</term>
<term>CdS</term>
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<front><div type="abstract" xml:lang="en">The sequential and cyclic spray ion layer gas reaction (spray-ILGAR) technique allows the deposition of metal chalcogenide films controllable from monodispersed nanodots to homogeneous compact layer. With access to this technique, a structured buffer layer for Cu(In,Ga)(S,Se)<sub>2</sub>
 cells, named "defect passivation/point contact bilayer buffer" is introduced at the heterogeneous interfaces to replace the conventional toxic CdS buffe Prod. Type: FTPr material and to improve the pure In<sub>2</sub>
S<sub>3</sub>
 buffer. Here, the spray-ILGAR ZnS nanodots serve as a passivation layer with a reduced interface recombination, while the compact spray-ILGAR In<sub>2</sub>
S<sub>3</sub>
 film on top and in-between the nanodots acts as point contact layer for the charge carrier transport. The optimal ZnS dot density and In<sub>2</sub>
S<sub>3</sub>
 thickness are determined and discussed in detail. As yet, the solar cell efficiency with ZnS/In<sub>2</sub>
S<sub>3</sub>
 buffer layer can be improved by about 1.5% absolutely as compared to a pure In<sub>2</sub>
S<sub>3</sub>
 buffered cell. Apart from the electronic properties of the absorber/ buffer interface, also the chemical and diffusion processes during junction formation, which may influence the properties of the completed solar cell, are investigated and discussed.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Spray-ILGAR ZnS nanodots/In<sub>2</sub>
S<sub>3</sub>
 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)<sub>2</sub>
 solar cells</s1>
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<fA11 i1="03" i2="1"><s1>KÖHLER (Tristan)</s1>
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<fA11 i1="04" i2="1"><s1>KRÜGER (Martin)</s1>
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<fA11 i1="05" i2="1"><s1>STEIGERT (Alexander)</s1>
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<fA11 i1="06" i2="1"><s1>LAUERMANN (Iver)</s1>
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<fA11 i1="07" i2="1"><s1>LUX-STEINER (Martha Ch.)</s1>
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<fC01 i1="01" l="ENG"><s0>The sequential and cyclic spray ion layer gas reaction (spray-ILGAR) technique allows the deposition of metal chalcogenide films controllable from monodispersed nanodots to homogeneous compact layer. With access to this technique, a structured buffer layer for Cu(In,Ga)(S,Se)<sub>2</sub>
 cells, named "defect passivation/point contact bilayer buffer" is introduced at the heterogeneous interfaces to replace the conventional toxic CdS buffe Prod. Type: FTPr material and to improve the pure In<sub>2</sub>
S<sub>3</sub>
 buffer. Here, the spray-ILGAR ZnS nanodots serve as a passivation layer with a reduced interface recombination, while the compact spray-ILGAR In<sub>2</sub>
S<sub>3</sub>
 film on top and in-between the nanodots acts as point contact layer for the charge carrier transport. The optimal ZnS dot density and In<sub>2</sub>
S<sub>3</sub>
 thickness are determined and discussed in detail. As yet, the solar cell efficiency with ZnS/In<sub>2</sub>
S<sub>3</sub>
 buffer layer can be improved by about 1.5% absolutely as compared to a pure In<sub>2</sub>
S<sub>3</sub>
 buffered cell. Apart from the electronic properties of the absorber/ buffer interface, also the chemical and diffusion processes during junction formation, which may influence the properties of the completed solar cell, are investigated and discussed.</s0>
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<fC02 i1="03" i2="X"><s0>230</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>Thickness</s0>
<s5>09</s5>
</fC03>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Comparative study</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Estudio comparativo</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Propriété électronique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Electronic properties</s0>
<s5>12</s5>
</fC03>
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<s5>12</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>Matériau absorbant</s0>
<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>15</s5>
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<s5>15</s5>
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<fC03 i1="16" i2="X" l="SPA"><s0>Proceso difusión</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Sulfure de zinc</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Zinc sulfide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Zinc sulfuro</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Bicouche</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Bilayers</s0>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Sulfure de gallium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Gallium sulfide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Galio sulfuro</s0>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Sulfure de cuivre</s0>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Copper sulfide</s0>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Cobre sulfuro</s0>
<s5>26</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Séléniure de cuivre</s0>
<s2>NK</s2>
<s5>27</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>27</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>28</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>28</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Sulfure de cadmium</s0>
<s5>30</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Cadmium sulfide</s0>
<s5>30</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Cadmio sulfuro</s0>
<s5>30</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Chalcopyrite</s0>
<s5>31</s5>
</fC03>
<fC03 i1="26" i2="X" l="ENG"><s0>Chalcopyrite</s0>
<s5>31</s5>
</fC03>
<fC03 i1="26" i2="X" l="SPA"><s0>Calcopirita</s0>
<s5>31</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>ZnS</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>In2S3</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE"><s0>Cu(In,Ga)(S,Se)2</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>CdS</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fN21><s1>287</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
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   |texte=   Spray-ILGAR ZnS nanodots/In2S3 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)2 solar cells
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Spray-ILGAR ZnS nanodots/In2S3 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)2 solar cells

Spray-ILGAR ZnS nanodots/In2S3 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)2 solar cells

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